By Topic

Influence of thermal treatment and radiation on some electrophysical parameters of langasite crystals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Dubovik, M.F. ; Inst. for Single Crystals, Kharkiv, Ukraine ; Zagoruiko, Yu.A. ; Korshikova, T.I. ; Shmaly, Yu.S.
more authors

La3Ga5SiO14 (LGSO) is a promising material for piezoengineering and acoustoelectronics. Studied in the present research is the influence of thermal treatment at T⩾1227 K on the electrophysical parameters of langasite samples subjected to the action of direct electric current at E⩾400 V×cm-1, T>627 K and β-radiation at D⩽106 Rd. It is found that rhodium-doped LGSO crystals have an original rose-brown coloration. This coloration becomes more intense in the anode-adjacent parts at the increase of the treatment duration and the intensity of the applied electric field. Such samples are characterized by the presence of an absorption band at λ=0.58 μm in the optical trans-transmission spectra, electrical resistivity e>1010 Ohm×cm, tangent of dielectric loss angle tgS⩽0.01 The electrical characteristics of Y-cut plates of LGSO are measured before and after thermal treatment. It is shown that after 15 minutes long electric field annealing at T≃688 K with E≃430 V×cm-1 the plates of LGSO have less stable electrical characteristics in comparison with those of samples annealed in air at T≈1223 K for 6 hours

Published in:

Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.

Date of Conference:

5-7 Jun 1996