Referenced Items are not available for this document.
In this paper, the variations of the main characteristics in three SOI device structures due to channel length and thin-film thickness variations are investigated. The structures are studied in a 32 nm technology and include SOI-GPS (Ground-Plane in Substrate), SOI-GPB (Ground-Plane in BOX), and SOI-WGP (Without Ground Plane). For this study, we assume normal distributions for the channel length and thin-film thickness of the transistors and then obtain the distributions for the threshold voltage, leakage, DIBL coefficient, and subthreshold swing. The results show that the GPS structure is more resistant against the variations when compared to the other two structures.
Published in:
Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
Date of Conference: 3-4 Aug. 2010
- Page(s):
- 66 - 69
- Print ISBN:
- 978-1-4244-7809-5
- INSPEC Accession Number:
- 11486575
- Conference Location :
- Penang
- Digital Object Identifier :
- 10.1109/ASQED.2010.5548155
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
