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Memristive devices fabricated with silicon nanowire schottky barrier transistors

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5 Author(s)
Sacchetto, D. ; Integrated Syst. Lab. (LSI), Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland ; Ben-Jamaa, M.H. ; Carrara, S. ; De Micheli, G.
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This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowire (poly-SiNW) channel in back-gate configuration. The memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process. We show that 2 different regimes are possible, making these devices suitable either for volatile ambipolar memory or resistive random access memory (RRAM) applications. In addition, frequency- and amplitude- dependence of the memristive behavior are reported.

Published in:

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Date of Conference:

May 30 2010-June 2 2010

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