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110+ GHz Transimpedance Amplifier in InP-HBT Technology for 100 Gbit Ethernet

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10 Author(s)
Charles H. Fields ; LLC, HRL Laboratories, Malibu, CA, USA ; Tom Tsen ; Chuck McGuire ; Yeong Yoon
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A 50 dB-Ω transimpedance amplifier (TIA) with a bandwidth greater than 110 GHz has been demonstrated using InP HBT technology. The wide-band amplifier with a cutoff frequency > 110 GHz was designed and fabricated in HRL Laboratories' G4 0.25 μm InP HBT IC technology. The amplifier operates at -4.0 V with a current draw of 76 mA for a power consumption of 304 mW. The basic Cherry-Hooper gain cell is used with a single-ended input and a differential output buffer stage.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:20 ,  Issue: 8 )