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In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT). Furthermore, when compared with a full SJ IGBT, the device has a considerably simpler process of manufacturing as the existing fabrication process for the “CoolMOS” could be used. The Semi-SJ IGBT offers better robustness against cosmic rays compared with an FS IGBT; the failure-in-time per surface area (FIT/A) of the device levels are up to two orders of magnitude lower. Alternatively, by changing the structure parameters, one can improve dramatically the on state versus switching tradeoff while maintaining the same FIT/A levels.