Cart (Loading....) | Create Account
Close category search window
 

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Qin Zhang ; Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA ; Yeqing Lu ; Grace Xing, Huili ; Koester, S.J.
more authors

A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λeff is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that, even for a thick SiO2 back oxide, λeff can be improved efficiently by a thinner top oxide thickness and, to some extent, with high-k dielectrics. The model is then applied to a self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier FETs (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for a large λeff, the scaling is limited by the conventional electrostatic short-channel effects. On the other hand, for a small λeff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100 mV/dec is still possible with a sub-10-nm gate length in GNR SB-FETs.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.