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Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High- k Gate Stacks

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6 Author(s)
Crespo-Yepes, A. ; Dept. d''Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain ; Martin-Martinez, J. ; Rothschild, A. ; Rodriguez, R.
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The reversibility of the gate dielectric breakdown (DB) in ultrathin high-k dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

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