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Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

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7 Author(s)
Urban, C. ; Inst. of Bio- & Nanosyst. 1, Julich, Germany ; Emam, M. ; Sandow, C. ; Knoch, J.
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We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i.e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of fT = 140 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )