Referenced Items are not available for this document.
The multi-material MEMS fabrication process often requires a larger number of masks making it more expensive as compared to single-material MEMS (SMM) technology. By varying the doping level in poly-C, semi-conducting, metallic and insulating (undoped) properties are achieved that are needed for poly-C SMM. However, the development of diamond-based SMM technology faces a number of challenges including (a) producing highly-insulating and highly-conducting poly-C films, (b) creating ohmic contacts and (c) patterning by dry etching of poly-C films grown on Si or SiO2. These challenges are addressed in this paper.
Published in:
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Date of Conference: 24-28 Jan. 2010
- Page(s):
- 51 - 54
- ISSN :
- 1084-6999
- E-ISBN :
- 978-1-4244-5763-2
- Print ISBN:
- 978-1-4244-5761-8
- INSPEC Accession Number:
- 11241165
- Conference Location :
- Wanchai, Hong Kong
- Digital Object Identifier :
- 10.1109/MEMSYS.2010.5442569
- Product Type:
- Conference Publications
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