By Topic

Impact of Photocapacitance on Phase Response of GaN/Sapphire SAW UV Sensor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Venkata S. Chivukula ; Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, 12180 ; Daumantas Ciplys ; Romualdas Rimeika ; Michael S. Shur
more authors

The response of GaN/sapphire SAW delay line to the focused ultraviolet (UV) illumination was investigated at the SAW frequency 306 MHz and optical wavelength 375 nm. The UV irradiation of an interdigital transducer (IDT) led to 4 to 5 times larger phase change of transmitted signal than the irradiation of the surface acoustic wave (SAW) propagation path between the IDTs at the same UV light spot size of 2.4 mm. The UV-induced phase change has been attributed to the variation in IDT impedance due to photo-capacitive effect. Simulation of the SAW sensor phase response on the basis of this model is in good agreement with experimental results.

Published in:

IEEE Sensors Journal  (Volume:10 ,  Issue: 4 )