By Topic

Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Rao, R. ; Dept. of Electr. Eng., Indian Inst. of Technol. (IIT) Madras, Chennai, India ; DasGupta, N. ; DasGupta, A.

An analytical threshold voltage model developed for a nonuniformly doped channel is used to study the random dopant fluctuation (RDF) effects in FD-SOI MOSFETs. RDF results in nonuniform doping in the channel, leading to deviation in the threshold voltage, which can be computed using this analytical model. The effect of device parameters on RDF-induced threshold voltage deviations is also investigated. For each study, a large sample size has been used. This has been possible owing to the computational efficiency of the analytical model. Studies on the threshold voltage variation due to combined effects of RDF and other device parameter fluctuations have also been carried out.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:10 ,  Issue: 2 )