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Emerging nanoscale silicon devices taking advantage of nanostructure physics

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3 Author(s)
Hiramoto, T. ; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8505, Japan ; Saitoh, M. ; Tsutsui, G.

This paper describes the present status of research on emerging nanoscale silicon devices that take full advantage of new physical phenomena which appear in silicon nanostructures. This new physics includes quantum effects that enhance the performance of MOS transistors and single-electron charging effects that add new function to conventional CMOS circuits. These physical phenomena may be used to extend the scaling and performance limits of conventional CMOS.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:50 ,  Issue: 4.5 )