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Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

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12 Author(s)
Joseph, A.J. ; IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452, USA ; Gillis, J.D. ; Doherty, M. ; Lindgren, P.J.
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We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low-inductance ground to the package using through-silicon vias (TSVs) that results in a competitive solution for future multiband and multimode PA integration. The tungsten-filled, multifinger, bar-shaped TSV delivers more than a 75% reduction in inductance compared to a traditional wirebond. This enables higher frequency applications with a roughly 20% reduction in die area without compromising the technology reliability for use conditions in a low-cost plastic QFN (quad flat no leads) package. In this paper we demonstrate the commercial feasibility of the TSV, its RF performance, its reliability, and its usefulness in a demanding WiMAX® (Worldwide Interoperability for Microwave Access) PA application.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:52 ,  Issue: 6 )

Date of Publication:

Nov. 2008

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