By Topic

Adsorbed surfactant thickness on: A Si wafer dominating etching properties of TMAH solution

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Bin Tang ; Department of Micro-Nanosystem Engineering, Nagoya University, B3-3-641 Furoh-cho Chikusa-ku Nagoya 464-8603, Japan ; Miguel A Gosalvez ; Prem Pal ; Shintaro Itoh
more authors

The goal of this article is to study the etching properties as a function of various adsorbed surfactant thickness in wet anisotropic etching process of TMAH solution. The thickness of preferentially adsorbed surfactant molecules on Si{110} and Si{100} has been evaluated by using spectroscopic ellipsometry (SE). The dependence of the etch rate in TMAH and the surface roughness on the layer thickness demonstrates that the surfactant is adsorbed at the interface during etching in TMAH+Triton. A thin pre-adsorbed layer is sufficient to dramatically improve the etching characteristics of silicon.

Published in:

Micro-NanoMechatronics and Human Science, 2009. MHS 2009. International Symposium on

Date of Conference:

9-11 Nov. 2009