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A temperature-dependent power MOSFET model for switching application

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4 Author(s)
H. Dia ; CNRS; LAAS; 7 avenue du Colonel Roche, F-31077 Toulouse, France ; J. B. Sauveplane ; P. Tounsi ; J-M. Dorkel

In this paper, an electrical model of a power vertical MOSFET sensitive to temperature is proposed using VHDL-AMS code. Our modeling approach is based on basic physical MOSFET effect and on its technological structure. Thermal sensitivity of MOSFET parameters is discussed and characterized. Validation of the model accuracy is presented by comparison between simulations and experimental results. Among the benefits of this technique are fast simulation, good agreement between simulations and measurements and useful insights into thermal sensitivity of MOSFET performance in switching applications. This work is the first step to electro-thermal simulation of power device by simulator coupling.

Published in:

Thermal Investigations of ICs and Systems, 2009. THERMINIC 2009. 15th International Workshop on

Date of Conference:

7-9 Oct. 2009