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Low Dose Rate Test Results of National Semiconductor's ELDRS-Free Bipolar Low Dropout (LDO) Regulator, LM2941 at Dose Rates of 1 and 10 Mrad(Si)/S

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4 Author(s)
Kirby Kruckmeyer ; Nat. Semicond., Santa Clara, CA, USA ; Larry McGee ; Thang Trinh ; Joe Benedetto

Low dose rate (LDR), ultralow dose rate (UDR) and high dose rate (HDR) total ionizing dose (TED) test results, drift analysis and an enhanced low dose rate sensitivity (ELDRS) characterization are presented for National Semiconductor's EDLRS-free bipolar low dropout (LDO) regulator, LM2941WGRLQMLV (5962R9166702VYA). Dose rates used were 0.001, 0.01 and 170 rad(Si)/s.

Published in:

2009 IEEE Radiation Effects Data Workshop

Date of Conference:

20-24 July 2009