Referenced Items are not available for this document.
The results of recent single event gate rupture and single event burnout testing on power MOSFETS are presented. The recent test data show a considerable drop in failure voltage in comparison to manufacturer data for device ratings over 130 V. The effect of range is considered to account for this difference. The methods and practices for testing and data analyses that need to be used for adequate SEE testing of power MOSFETs are also presented.
Published in:
Radiation Effects Data Workshop, 2009 IEEE
Date of Conference: 20-24 July 2009
- Page(s):
- 82 - 93
- Print ISBN:
- 978-1-4244-5092-3
- INSPEC Accession Number:
- 10977522
- Conference Location :
- Quebec City, QC
- Digital Object Identifier :
- 10.1109/REDW.2009.5336308
- Product Type:
- Conference Publications
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