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A Wideband Low Noise Amplifier With 4 kV HBM ESD Protection in 65 nm RF CMOS

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6 Author(s)
Ming-Hsien Tsai ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Hsu, S.S.H. ; Fu-Lung Hsueh ; Chewn-Pu Jou
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This study presents a wideband low noise amplifier (LNA) including electrostatic discharge (ESD) protection circuits using 65 nm CMOS with a gate oxide thickness of only ~ 2 nm. By co-designing the ESD blocks with the core circuit, the LNA shows almost no performance degradation compared to the reference design without ESD. Under a power consumption of only 6.8 mW, the silicon results show that the LNA can achieve a peak power gain of 13.8 dB. Within the 3 dB bandwidth from 2.6 GHz to 6.6 GHz, the noise figure (NF) is in a range of 4.0 dB to 6.5 dB and the input reflection coefficient S 11 is below -13.0 dB. Using the miniaturized Shallow-Trench-Isolation (STI) diode of ~ 40 fF capacitance and a robust gate-driven power clamp configuration, the proposed LNA demonstrates an excellent 4 kV human body mode (HBM) ESD performance, which has the highest voltage/capacitance ratio ( ~ 100 V/fF) among the published results for RF LNA applications.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:19 ,  Issue: 11 )

Date of Publication:

Nov. 2009

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