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A 3–10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits

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3 Author(s)
Chung-Yu Wu, Ph.D. ; Dept. of Electron. Eng., Nat. ChiaoTung Univ., Hsinchu, Taiwan ; Yi-Kai Lo ; Min-Chiao Chen

A low-power fully integrated low-noise amplifier (LNA) with an on-chip electrostatic-static discharge (ESD) protection circuit for ultra-wide band (UWB) applications is presented. With the use of a common-gate scheme with a gm-boosted technique, a simple input matching network, low noise figure (NF), and low power consumption can be achieved. Through the combination of an input matching network, an ESD clamp circuit has been designed for the proposed LNA circuit to enhance system robustness. The measured results show that the fabricated LNA can be operated over the full UWB bandwidth of 3.0 to 10.35 GHz. The input return loss (S11) and output return loss (S22) are less than -8.3 dB and -9 dB, respectively. The measured power gain (S21) is 11 plusmn1.5 dB, and the measured minimum NF is 3.3 dB at 4 GHz. The dc power dissipation is 7.2 mW from a 1.2 V supply. The chip area, including testing pads, is 1.05 mm times 0.73 mm.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:19 ,  Issue: 11 )