Referenced Items are not available for this document.
A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements.
Published in:
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Date of Conference: 19-23 Sept. 2004
- Page(s):
- 1 - 8
- E-ISBN :
- 978-1-5853-7063-4
- Print ISBN:
- 978-1-5853-7063-4
- INSPEC Accession Number:
- 10907148
- Conference Location :
- Grapevine, TX
- Digital Object Identifier :
- 10.1109/EOSESD.2004.5272623
- Product Type:
- Conference Publications
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