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Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application

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4 Author(s)
Vashchenko, V.A. ; Nat. Semicond. Corp., Santa Clara, CA, USA ; Kindt, W. ; Ter Beek, M. ; Hopper, P.

A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements.

Published in:

Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.

Date of Conference:

19-23 Sept. 2004

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