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Dedicated Large-Signal GaN HEMT Model for Switching-Mode Circuit Analysis and Design

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3 Author(s)
Aflaki, P. ; ECE Dept., Univ. of Calgary, Calgary, AB, Canada ; Negra, R. ; Ghannouchi, F.M.

A novel large-signal gallium nitride (GaN) high electron mobility transistor (HEMT) model that focuses on and improves analysis and design of switching-mode power amplifiers (PAs) is presented in this letter. The proposed model can be constructed using standard DC and AC characterization measurements and easily implemented in any computer-aided design (CAD) software to simulate and design switching-mode amplifiers. The model can predict the behavior of a switching-mode PA accurately at saturation and, due to the proposed approach, also well in the weak compression region. Using the developed model, an inverse class-F PA is designed and fabricated for validation purposes. The prototype developed using the proposed model achieved power-added efficiency (PAE) of 67% for an output power of 36.7 dBm at 2.35 GHz. Comparison between simulation and measured results of the manufactured PA proves the validity and accuracy of the proposed model.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:19 ,  Issue: 11 )