By Topic

Performance Improvement of \hbox {Sm}_{2}\hbox {O}_{3} MIM Capacitors by Using Plasma Treatment After Dielectric Formation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Jian-Jun Yang ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Jing-De Chen ; Rick Wise ; Philipp Steinmann
more authors

In this letter, we investigate the dependence of the performance of metal-insulator-metal (MIM) capacitors with Sm2O3 dielectric on plasma treatment (PT) performed before Sm2O3 deposition, after Sm2O3 deposition, or both before and after Sm2O3 deposition. By performing PT in N2 ambient (PTN) after Sm2O3 dielectric formation, the effective quadratic voltage coefficient of capacitance (VCC) can be reduced from 498 to 234 ppm/V2 and the effective linear VCC can be reduced from 742.3 to 172 ppm/V for MIM capacitor with Sm2O3 dielectric having a capacitance density of ~ 7.5 fF/mum2. The leakage current density at +3.3 V can be reduced from 3.44 10-7 to 1.60 times 10-8 A/cm2 by performing PTN in both before and after Sm2O3 deposition. PTN after dielectric formation is an effective way to improve the performance of high-kappa dielectric MIM capacitors for RF and analog/mixed signal IC applications.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 10 )