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Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

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9 Author(s)
Ki Hwan Kim ; Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea ; Bo Soo Kang ; Myoung-Jae Lee ; Seung-Eon Ahn
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A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnOx (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )