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Multiband Mobility in Semiconducting Carbon Nanotubes

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3 Author(s)
Yang Zhao ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Liao, Albert ; Pop, E.

We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm2/Vmiddots at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )