Referenced Items are not available for this document.
Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (kappa = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (gammas) on the surface of the HfOx layer were 1.304 nm and 34.24 mJ/cm2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm2/(V middots) .
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
10
)
Date of Publication: Oct. 2009
- Page(s):
- 1039 - 1041
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10890565
- Digital Object Identifier :
- 10.1109/LED.2009.2029876
- Product Type:
- Journals & Magazines
- Date of Publication :
- 01 September 2009
- Date of Current Version :
- 25 September 2009
- Issue Date :
- Oct. 2009
- Sponsored by :
- IEEE Electron Devices Society
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