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Characterization of Next Generation Thin Low-K and Low-Loss Organic Dielectrics From 1 to 110 GHz

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12 Author(s)
Seunghyun Hwang ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Sunghwan Min ; Madhavan Swaminathan ; Venkatesan Venkatakrishnan
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This paper presents, for the first time, characterization results of next generation dielectric core and build up material called RXP, which has low dielectric constant (2.93-3.48) and low loss tangent (0.0037-0.006) up to 110 GHz. Unlike LCP, this material can be made ultra-thin with low processing temperature and is ideally suited for mobile applications. Causal models suitable for high frequency applications have been extracted by measuring the response of cavity resonators using vector network analyzer and surface profiler.

Published in:

IEEE Transactions on Advanced Packaging  (Volume:33 ,  Issue: 1 )