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A 250 mV bit-line swing scheme for a 1 V 4 Gb DRAM

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6 Author(s)
Inaba, T. ; ULSI Res. Center, Toshiba Corp., Kawasaki, Japan ; Takashima, D. ; Oowaki, Y. ; Ozaki, T.
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We have proposed a new 1/4 Vcc bit-line swing architecture and related sense amplifier for 1 V 4 Gb DRAM and beyond. These schemes reduce power dissipation to 40% without degradation of the read-out signal and also improve device reliability.

Published in:

VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on

Date of Conference:

8-10 June 1995