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Critical charge characterization in 6-T SRAMs during read mode

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3 Author(s)
Sebastia Bota ; Jaume Segura Grup de Sistemes Electronics. Balearic Islands University Carretera de Valldemossa km 7.5. 07122 Palma de Mallorca (Spain) ; Gabriel Torrens ; Bartomeu Alorda

In this work we analyze the effects of radiation-induced transient pulses on 6T SRAM cells operating in read mode. The critical charge of a memory cell during read mode is lower than in hold mode. For 1 to 0 upsets, this reduction reaches a factor x 1.5 for events produced by alpha particles; this factor is even higher for longer induced current pulses. The impact of events propagated through the bit-lines is also analyzed. Results show that it is possible the occurrence of an upset in the sense amplifier producing a wrong output in the readout process without changing the memory cell stored value.

Published in:

2009 15th IEEE International On-Line Testing Symposium

Date of Conference:

24-26 June 2009