Cart (Loading....) | Create Account
Close category search window
 

High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hoi Wong, Man ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Yi Pei ; Brown, D.F. ; Keller, Stacia
more authors

A high-performance N-face GaN metal-insulator-semiconductor high-electron-mobility transistor was fabricated. A dual-AlN back-barrier scheme was developed using polarization engineering to provide a large total dipole moment, which allowed enhanced modulation doping for a higher 2-D electron gas density without parallel conduction. Devices with 0.6-mum gate length showed an fT and f max of 17 and 58 GHz, respectively. A highest power-added efficiency (PAE) of 71% at 4 GHz was measured in these devices with 20-V drain bias. At 28 V, an output power density of 6.4 W/mm with 67% PAE was achieved.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )

Date of Publication:

Aug. 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.