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ESD protection for RF/AMS ICs: Design and optimization

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11 Author(s)
X. Wang ; Dept. of Electrical Engineering, University of California, Riverside, 92521, USA ; H. Tang ; L. Lin ; Q. Fang
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This paper reviews key factors to practical ESD protection design for RF and analog/mixed-signal (AMS) ICs, including general challenges emerging, ESD-RFIC interactions, RF ESD design optimization and prediction, RF ESD design characterization, ESD-RFIC co-design technique, etc. Practical design examples are discussed. It means to provide a systematic and practical design flow for whole-chip ESD protection design optimization and prediction for RF/AMS ICs to ensure 1st Si design success.

Published in:

2009 IEEE International Conference on IC Design and Technology

Date of Conference:

18-20 May 2009