By Topic

Lattice-Mismatched \hbox {In}_{0.4}\hbox {Ga}_{0.6} \hbox {As} Source/Drain Stressors With In Situ Doping for Strained \hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} Channel n-MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hock-Chun Chin, C. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Xiao Gong ; Liu, Xinke ; Yee-Chia Yeo

We report the first demonstration of a strained In0.53 Ga0.47As channel n-MOSFET featuring in situ doped In0.4Ga0.6As source/drain (S/D) regions. The in situ silicondoped In0.4Ga0.6As S/D was formed by a recess etch and a selective epitaxy of In0.4Ga0.6As in the S/D by metal-organic chemical vapor deposition. A lattice mismatch of ~ 0.9% between In0.53Ga0.47As and In0.4 Ga0.6As S/D gives rise to lateral tensile strain and vertical compressive strain in the In0.53Ga0.47As channel region. In addition, the in situ Si-doping process increases the carrier concentration in the S/D regions for series-resistance reduction. Significant drive-current improvement over the control n-MOSFET with Si-implanted In0.53Ga0.47As S/D regions was achieved. This is attributed to both the strain-induced band-structure modification in the channel that reduces the effective electron mass along the transport direction and the reduction in the S/D series resistance.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )