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Double-reduced-surface-field (RESURF) MOSFETs with N2O-grown oxides have been fabricated on the 4H-SiC (0001macr) face. The double-RESURF structure is effective in reducing the drift resistance, as well as in increasing the breakdown voltage. In addition, by utilizing the 4H-SiC (0001macr) face, the channel mobility can be increased to over 30 cm2 / V ldr s, and hence, the channel resistance is decreased. As a result, the fabricated MOSFETs on 4H-SiC (0001macr) have demonstrated a high breakdown voltage (VB) of 1580 V and a low on-resistance (RON) of 40 mOmega ldr cm2. The figure-of-merit (VB 2/RON) of the fabricated device has reached 62 MW/cm2, which is the highest value among any lateral MOSFETs and is more than ten times higher than the "Si limit".