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A Low-Voltage Lateral SJ-FINFET With Deep-Trench p-Drift Region

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4 Author(s)
Yoo, A. ; Samsung Electron. Co., Ltd., Giheung, South Korea ; Onish, Y. ; Xu, E. ; Ng, J.C.W.

A novel device structure that is suitable for practical implementation of lateral superjunction FINFET (SJ-FINFET) on a silicon-on-insulator platform is proposed for sub-200-V rating power applications. The SJ-FINFET structure with heavily doped alternating U-shaped n/p pillars is introduced to minimize both channel and drift resistances and to mitigate electron current crowding near the top of n-drift region. The proposed device structure exhibits low R on, sp with voltage ratings below 200 V. The optimal device characteristics were validated by a 3-D numerical device simulator, ISE-DESSIS. The simulations with trench depths of 2 and 3 mum were analyzed for several different drift lengths and found to be able to overcome the Si limit with the breakdown voltages of 165 and 90 V, respectively.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )