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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:27 Issue:1 Help

Band offsets and work function control in field effect transistors

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1 Author(s)
Robertson, J. ; Department of Engineering, Cambridge University, Cambridge CB2 1PZ, United Kingdom

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3072517 

The article summarizes the development of metal gate materials and the control of the effective work function on high dielectric constant (high K) oxides for use in advanced Si field effect transistors. The Schottky barrier heights of metals on HfO2 are calculated accurately for ideal interfaces of various stoichiometries and for interfaces with defects.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 1 )

Date of Publication: Jan 2009

Page(s):
277 - 285
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.3072517
Product Type:
Journals & Magazines
Date of Current Version :
24 June 2009
Issue Date :
Jan 2009

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