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We report the design, fabrication, and characterization of ultrahigh-gain metamorphic high-electron-mobility transistors (MHEMTs) with significantly enhanced breakdown performance. In this letter, an asymmetrically recessed 50-nm Gamma-gate process has been successfully applied to epitaxial designs with double-sided-doped InAs-layer-inserted channels grown on GaAs substrates. The critical gate recess width has been optimized for device performance, including transconductance, breakdown voltage, and gain. The employment of a device passivation process greatly minimizes the adverse impacts that the aggressive vertical and lateral scaling would have introduced for pursuing enhanced performance. As a result, we have achieved 1.9-S/mm transconductance and 800-mA/mm maximum drain current at a drain bias of 1 V, 9-V off-state breakdown voltage, approximately 3.5-V on-state breakdown voltage, and 14.2-dB maximum stable gain at 110 GHz. To our knowledge, this is a record combination of gain and breakdown performance reported for microwave and millimeter-wave HEMTs, making these devices excellent candidates for ultrahigh-frequency power applications.