Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chen, C.L. ; Lincoln Lab., MIT, Lexington, MA, USA ; Mahoney, L.J. ; Nichols, K.B. ; Brown, E.R.
more authors

A new p-channel GaAs metal-insulator-semiconductor field-effect transistor (MISFET) using low-temperature-grown (LTG) GaAs as the gate insulator is demonstrated. Neither the GaAs conducting channel nor the gate insulator was doped, and a Be self-aligned implant was used to lower the source and drain series resistance. For a MISFET with a 1.5-μm gate length, the transconductance is 22 mS/mm and the maximum drain current is 120 mA/mm obtained at -8 V of gate bias. The measured unity-current-gain cut-off frequency fT is 2.0 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 8 )