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Enhanced device performance by unstrained In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As doped-channel FET on GaAs substrates

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4 Author(s)
Ming-Ta Yang ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Chan, Yi-Jen ; Jia-Lin Shieh ; Jen-Inn Chyi

An alternative In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density. This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 8 )