Referenced Items are not available for this document.
An alternative In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density. This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.
Published in:
Electron Device Letters, IEEE
(Volume:17
,
Issue:
8
)
Date of Publication: Aug. 1996
- Page(s):
- 410 - 412
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5354972
- Digital Object Identifier :
- 10.1109/55.511591
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1996
- Sponsored by :
- IEEE Electron Devices Society
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