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A new technique to extract oxide trap time constants in MOSFET's

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4 Author(s)
Tahui Wang ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chang, T.E. ; Chiang, L.P. ; Huang, C.

A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs=-4 V and Vds=3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 8 )