Referenced Items are not available for this document.
The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3sigma) over the temperature range from -22degC to 85degC . Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm2 and draws 34 muA from a 1.2 V supply at room temperature.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:44
,
Issue:
7
)
Date of Publication: July 2009
- Page(s):
- 2002 - 2009
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 10758383
- Digital Object Identifier :
- 10.1109/JSSC.2009.2020247
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 23 June 2009
- Issue Date :
- July 2009
- Sponsored by :
- IEEE Solid-State Circuits Society
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