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A quarter-micron SIMOX-CMOS LVTTL-compatible gate array with an over 2,000 V ESD-protection circuit

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5 Author(s)
Y. Ohtomo ; NTT LSI Labs., Kanagawa, Japan ; T. Mizusawa ; K. Nishimura ; H. Sawada
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A quarter-micron SIMOX-CMOS gate array with an LVTTL interface is described. The SIMOX-CMOS gates have the same delay at 1.2 V of supply voltage as that of the gates in 0.5-μm bulk CMOS at 3.3 V and reduce power consumption 87%. The interface circuits in the array convert 3.3 V external signal from/to 2.0 V-1.2 V internal signal with little power penalty. An ESD protection circuit for the chip shows over 2,000 V of ESD hardness in the advanced SIMOX-CMOS having 50-nm thick silicon film

Published in:

Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996

Date of Conference:

5-8 May 1996