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A long data retention SOI-DRAM with the body refresh function

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5 Author(s)
Tomishima, S. ; ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan ; Morishita, F. ; Tsukude, M. ; Yamagata, T.
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We have proposed a body refresh function and circuits for SOI DRAMs. The body refresh utilizes a swinging of the bit line and gives stable body potential, long dynamic data retention time and low power consumption without any increase in the chip area.

Published in:

VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on

Date of Conference:

13-15 June 1996

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