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A small data-line-swing read/write scheme for high-endurance nonvolatile DRAMs with ferroelectric capacitors

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6 Author(s)
Sakata, T. ; Central Res. Lab., Hitachi Ltd., Kokubunji, Japan ; Fujisawa, H. ; Sekiguchi, T. ; Torii, K.
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A small data-line-swing read/write scheme featuring a doubled data-line-capacitance recall technique was proposed. The proposed scheme enables nonvolatile DRAMs to approach the performance, including endurance and power consumption, of existing volatile DRAMs could be achieved.

Published in:

VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on

Date of Conference:

13-15 June 1996

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