By Topic

Comparative Study of Losses in Ultrasharp Silicon-on-Insulator Nanowire Bends

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhen Sheng ; State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China ; Daoxin Dai ; Sailing He

Ultrasharp silicon-on-insulator (SOI) nanowire bends (with a bending radius of R < 2 mu m) are analyzed numerically. It is shown that the calculated bending losses for ultrasharp bends are overestimated when using a modal analysis method based on finite-difference method. In this case, reliable estimation of the bending loss can be made with a 3-D finite-difference time-domain (3-D-FDTD) method. By using 3-D-FDTD simulation, the losses in SOI nanowire bends with different structures and parameters are studied. By increasing the core width or height of the waveguide, one can reduce the bending loss at longer wavelengths for TE mode while the bending performance at shorter wavelengths degrades due to the multimode effect. Increasing the core height is much more effective to reduce the bending loss of TM mode than increasing core width. The relationship between the intrinsic Q-factor of a microring resonator and the bending radius is also obtained.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:15 ,  Issue: 5 )