Referenced Items are not available for this document.
Electroabsorption modulators with polarization-independence of transmission (TE/TM sensitivity <0.4 dB at 1550 nm) over a wide wavelength range from 1540-1560 nm have been realized using tensile-strained InGaAs and InGaAsP quantum wells. Both designs show 42-GHz modulation bandwidth with a high bandwidth-to-drive-voltage ratio of >23 GHz/V. Polarization insensitivity of modulator transmission and chirp is demonstrated. Technical realization has been done in ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RIE) for semiconductor etching and polyimide for planarization.
Published in:
Photonics Technology Letters, IEEE
(Volume:8
,
Issue:
7
)
Date of Publication: July 1996
- Page(s):
- 891 - 893
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 5321374
- Digital Object Identifier :
- 10.1109/68.502261
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1996
- Sponsored by :
- IEEE Photonics Society
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