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A Freestanding GaN/HfO _{\bf 2} Membrane Grown by Molecular Beam Epitaxy for GaN–Si Hybrid MEMS

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4 Author(s)
Hidehisa Sameshima ; Dept. of Nanomech., Tohoku Univ., Sendai, Japan ; Masashi Wakui ; Fang-Ren Hu ; Kazuhiro Hane

Combination of GaN light source and Si-microelectromechanical systems (MEMSs) is a promising hybrid structure for optical MEMS. As one of GaN-Si hybrid structures, a freestanding GaN/HfO2 membrane was fabricated on Si substrate. Unlike conventional GaN membrane on Si substrate, the fabricated membrane had a tensile stress by using the HfO2 layer. Therefore, the GaN/HfO2 membrane was flat enough to be useful for several MEMS. The GaN crystal was grown by molecular beam epitaxy on the HfO2 layer deposited on Si substrate. The surface of the HfO2 layer was nitrified before GaN crystal growth, and thus, a part of HfO2 surface was changed to HfN, the lattice of which matched well to that of GaN. The characteristics of the GaN crystal grown on the nitrified HfO2 layer were also investigated.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:15 ,  Issue: 5 )