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RESET Mechanism of TiOx Resistance-Change Memory Device

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3 Author(s)
Wei Wang ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA ; Fujita, Shinobu ; Wong, S.S.

In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )