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Performance Improvement of N-Type \hbox {TiO}_{x} Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD

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5 Author(s)
Park, Jae-Woo ; Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Dongyun Lee ; Hakyoung Kwon ; Seunghyup Yoo
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We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiOx active channels grown at 250degC by plasma-enhanced atomic layer deposition. TFTs with as-grown TiOx films exhibited the saturation mobility (musat) as high as 3.2 cm2/V ldr s but suffered from the low on-off ratio (ION/IOFF) of 2.0 times 102 ldr N2O plasma treatment was then attempted to improve ION/IOFF. Upon treatment, the TiOx TFTs exhibited ION/IOFF of 4.7 times 105 and musat of 1.64 cm2/V ldr s, showing a much improved performance balance and, thus, demonstrating their potentials for a wide variety of applications such as backplane technology in active-matrix displays and radio-frequency identification tags.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )