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Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 °C

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5 Author(s)
Basu, A. ; Micro and Nanotechnology Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 and Department of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 ; Mohammed, F.M. ; Guo, S. ; Peres, B.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2178365 

Low-resistance Ohmic contacts on Al0.3Ga0.7N/GaN high electron mobility transistors (HEMTs) were formed with a Mo/Al/Mo/Au metallization scheme which was annealed at a relatively low temperature of 500 °C. A contact resistance of 0.11±0.05 Ω mm and a specific contact resistivity of 2.63×10-7 Ω cm2 were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 2 )

Date of Publication:

Mar 2006

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