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Growth of InAsSb-channel high electron mobility transistor structures

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5 Author(s)
Tinkham, B.P. ; Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Avenue SW, Washington, D.C. 20375 ; Bennett, B.R. ; Magno, R. ; Shanabrook, B.V.
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We discuss the molecular beam epitaxial growth of the random alloy InAsSb for use as the channel in high electron mobility transistors (HEMTs). Room-temperature mobilities of 22 000 cm2/V s have been achieved at a sheet carrier density of 1.4×1012/cm2. This is a marked improvement over the mobility of 13 000 cm2/V s at the same carrier density obtained in previous attempts to grow the InAsSb channel using a digital alloy procedure [J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, R. Bass, Electron. Lett. 35, 847 (1999)]. We have also implemented different barriers and buffer layers to enhance the transport properties and overall performance of the HEMT structure.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 4 )