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Characterization of prototype silicon pitch artifacts fabricated by scanning probe lithography and anisotropic wet etching

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7 Author(s)
Chien, F.S.-S. ; Center for Measurement Standards, Hsinchu 300, Taiwan ; Hsieh, W.F. ; Gwo, S. ; Jun, J.
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Scanning probe lithography (SPL) and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching (SPL+TMAH) were used to fabricate a series of one-dimensional prototype pitch structures on (110)-oriented silicon substrates. Overall lateral dimensions of the test structure are 20 μm ×80 μm. Line scales, consisting of 10-μm-long, 100-nm-tall, and 40-nm-wide lines, are observable by optical and scanning electron microscopy (SEM). Etched features were produced with pitches varying from 100 nm to 8 μm. Large-scale pattern placement errors of the SPL tool have been evaluated by analysis of optical image data obtained with a calibrated optical metrology instrument. Small-scale errors were analyzed in the range of 100 nm to 2 μm using SEM. Sources of placement error are discussed and possible methods for minimizing them are presented. The SPL+TMAH process in conjunction with a closed-loop scan control has the precision necessary for repeatable device prototyping in the nanoscale regime.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:23 ,  Issue: 1 )